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C1815 TRANSISTOR (NPN). FEATURES. Power dissipation. PCM: 0.4 W (Tamb=25℃). Collector current. ICM: 0.15 A. Collector-base voltage. V(BR)CBO: 60 V ...

http://www.8051projects.info/datasheets/C1815.pdf

Can share the B' transistor. BR 6/00. 4. We can reduce transistor count (cont. ... BR 6/00. 7. We Can Do Better. Remember that to share transistors between ...

http://www.ece.msstate.edu/~reese/EE8273/lectures/dcvsl/dcvsl.pdf

BR 6/00. 9. Summary of Pass Transistor Logic. • Works well for mux logic ... BR 6/00. 10. Sizing of Pass Transistors. Increasing W/L will decrease R, but ...

http://www.ece.msstate.edu/~reese/EE8273/lectures/pass_transistor/pass_transistor.pdf

Zetex Semiconductors plc 2007. ZXTP23015CFH. 15V, SOT23, PNP medium power transistor. Summary. V(BR)CES > -15V, V(BR)CEO > -15V. V(BR)ECO > -6V ...

http://www.diodes.com/datasheets/ZXTP23015CFH.pdf

50V, SOT23, NPN medium power transistor. Summary. V(BR)CEV > 80V, V(BR)CEO > 50V. IC(cont) = 5A. RCE(sat) = 24m typical. VCE(sat) < 40mV @ 1A. PD = 1.2W ...

http://www.diodes.com/datasheets/ZXTN2031F.pdf

NPN transistor. V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0;. Tamb = −55 to +150 °C; note 1 ...

http://www.platan.ru/pdf/1dist/philips/PZTM1101_1.pdf

For Each Transistor. Collector–Base Breakdown Voltage. V(BR)CBO IC = 100µA, IE = 0. 20. 60. –. V. Collector–Emitter Breakdown Voltage. V(BR)CEO IC = 1mA, ...

http://www.nteinc.com/specs/900to999/pdf/nte929.pdf

Output Transistor. Collector–Emitter Breakdown Voltage. V(BR)CEO IC = 1mA, IF = 0. 80. –. –. V. Emitter–Base Breakdown Voltage. V(BR)EBO IE = 100µA, IF = 0 ...

http://www.nteinc.com/specs/3000to3099/pdf/nte3043.pdf

Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur. Note 3 See curve ...

http://www.classiccmp.org/rtellason/chipdata/lm3146.pdf

15V, SOT23, NPN medium power transistor. Summary. V(BR)CEX > 60V, V(BR)CEO > 15V. IC(CONT) = 6A. RCE(SAT) = 19m typical. VCE(SAT) < 30mV @ 1A. PD = 1.25W ...

http://www.diodes.com.tw/zetex/_pdfs/3.0/pdf/ZXTN23015CFH.pdf

PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. DC characteristics of any single transistor. V(BR)CBO collector-base breakdown voltage. IC = 2.5 µA; IE = 0 ...

http://www.nxp.com/documents/data_sheet/BFM505.pdf

by T FABRICATION - Related articles

http://www.nxp.com/acrobat_download2/various/SC19_TRANSM_TRANS_DESIGN_1.pdf

NPN Darlington Transistor. This device is designed for applications requiring ... V(BR)CEO. Collector-Emitter Breakdown Voltage. IC = 10 mA, IB = 0 ...

http://www.fairchildsemi.com/ds/BC/BCV27.pdf

NPN High Voltage Transistor. Absolute Maximum Ratings * Ta = 25°C unless otherwise ... V(BR)CEO. Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0 ...

http://www.fairchildsemi.com/ds/FJ/FJV42MTF.pdf

by R Magno - 2005 - Cited by 7

http://www.nrl.navy.mil/estd/pubs/04-1226-2333.pdf

100V, SOT23, PNP medium power transistor. Summary. V(BR)CEV > -130V, V(BR)CEO > -100V. IC(cont) = -3A. RCE(sat) = 45m typical. VCE(sat) < -80mV @ -1A ...

http://www.powerdi.com/zetex/_pdfs/3.0/pdf/ZXTP2029F.pdf

60V, SOT23, NPN medium power transistor. Summary. V(BR)CEV > 140V, V(BR)CEO > 60V. IC(cont) = 5A. RCE(sat) = 25 m typical. VCE(sat) < 45 mV @ 1A. PD = 1.2W ...

http://www.powerdi.com/zetex/_pdfs/3.0/pdf/ZXTN2018F.pdf

BR min. Ip is the current through the coil when the transistor switches off. Fig. 3 shows the current variation versus time. 2. CURRENT IN THE TRANSIL ...

http://www.st.com/stonline/books/pdf/docs/3599.pdf

The device is a NPN transistor manufactured ... V(BR)CEO. Note 1. Collector-Emitter Breakdown. Voltage (IB = 0). IC = 10 mA ...

http://www.st.com/stonline/products/literature/ds/10962/std724.pdf

Kurze Mitteilungen - Brief Reports - Communications br~ves. ZAMP. REE. -vE. Figure 4. The transistor current source. This value is less than REoo. ...

http://www.springerlink.com/index/T8343568P337M76H.pdf

6 transistor outputs, 1 alarm contact. B44066R6106E230. BR 6000-R12. 12 relay outputs, 1 alarm contact. B44066R6012E230. BR 6000-T12 ...

http://www.tkelec.co.kr/data/BR6000 Cat.pdf

The BRT (Bias Resistor Transistor) contains a single transistor with a ... Collector–Base Breakdown Voltage (IC = 50 µAdc). V(BR)CBO ...

http://www.datasheetcatalog.org/datasheet/motorola/DTC114TE.pdf

V(BR)CEO > 60V. Ic(cont) = 1A. Vce(sat) < 500mV @ 1A. Complementary type. ZXTP2039F. Description. This transistor combines high gain, high current operation ...

http://www.farnell.com/datasheets/48358.pdf

transistor operating voltage and, as mentioned before under maximum ratings, usually is the basis for the collector-base maximum voltage rating. V(BR)CBO ...

http://paginas.fe.up.pt/~hmiranda/etele/trans_primer1.pdf

FOR EACH TRANSISTOR. Collector-to-Base Breakdown Voltage. V(BR)CBO. IC = 100μA, IE = 0. 20. 60. -. V. Collector-to-Emitter Breakdown Voltage. V(BR)CEO ...

http://www.intersil.com/data/fn/fn481.pdf

Emitter to Base Breakdown Voltage (V(BR)EBO). IE 10 µA, IC = 0 ... Note 2: The collector of each transistor is isolated from the substrate by an integral ...

http://iteso.mx/~emguerrero/Cursos/Electron-II/LM3046.pdf

Collector to Emitter Breakdown Voltage (V(BR)CEO) IC e 1 mA IB e 0 ... Note 1 The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated ...

http://web.mit.edu/6.301/www/LM3086.pdf

transistor per channel. This device is constructed with a high voltage .... Phototransistor Detector. Collector–Emitter Breakdown Voltage. V(BR)CEO ...

http://www.ecgproducts.com/specs/3000to3099/pdf/nte3086.pdf

TO-92 Plastic-Encapsulate Transistors. B772S TRANSISTOR(PNP). ELECTRICAL CHARACTERISTICS ... V(BR)CBO. V(BR)CEO. V(BR)EBO ...

http://www.china-zitaijing.com/down/sjg/gl/B772S.pdf

TRANSISTOR (PNP). FEATURES. Power dissipation. PCM: 0.3 W (Tamb=25℃). Collector current. ICM: -0.5 A. Collector-base voltage. V(BR)CBO: -40 V ...

http://www.sztuofeng.com/pdf/S8550LT1.pdf

C945 TRANSISTOR（NPN）. FEATURES. Power dissipation. PCM: 0.4W （Tamb=25℃）. Collector current. ICM: 0.15A. Collector-base voltage. V (BR) CBO: 60V ...

http://lee.tagus.ist.utl.pt/SUBA/Suba_files/c945.pdf

NPN silicon transistor. Features. • Hermetically sealed Cersot ceramic ... V(BR)CBO. IC = 100 µA. 40. Volts. Collector-Emitter Breakdown Voltage. V(BR)CEO ...

http://www.semicoa.com/Docs/Transistor/2N5109UB.pdf

SMALL LOAD SWITCH TRANSISTOR WITH. HIGH GAIN AND LOW SATURATION. VOLTAGE ... V(BR)CBO. Collector-Base. Breakdown Voltage. (IE = 0). IC = 10 µA ...

http://www.oup.com/us/pdf/microcircuits/students/bjt/2n3904-st.pdf

High-Frequency Transistor . . . designed for wideband amplifier, ... Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0). V(BR)CEO ...

http://www.cbtricks.com/Amp/datasheets/transistors/macom/mrf313_macom.pdf

This transistor is also available in the SOT-23 case ... V(BR)CEO. IC = 1 mA, IB = 0. 40. —. —. V. Emitter-Base Breakdown Voltage. V(BR)EBO ...

http://users.ipfw.edu/broberg/documents/2n3904.pdf

The resulting transistor shows exceptional high gain performances ... V(BR)EBO. Emitter-base breakdown voltage (IC = 0). IE = 100µA ...

http://www.stm32circle.com/projects/file/DataSheet/2str1230.pdf

Silicon NPN Transistor. General Purpose Amplifier. Applications: D Medium Power Amplifiers ... Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 ...

http://www.alliedelec.com/Images/Products/Datasheets/BM/NTE_ELECTRONICS/935-0085.PDF

MOS field-effect transistor of the. N-channel enhancement mode type. ... V(BR)DBO. > 15 V. Source-substrate breakdown voltage ...

http://bmc.bu.edu/bmc/asd/tester/BSS83.pdf

V(BR)CBO. Ic= -100 A IE=0. -40. V. Collector-emitter breakdown voltage V(BR)CEO. Ic= -0. 1 mA IB=0 ... E-mail: ic@wingshing.com. PNP SILICON TRANSISTOR. 9012.

http://www.tjbpi.com/jpk/dpj/ziliaoxiazai/pdf/9012.pdf

RF Power Transistors . . . designed primarily for wideband large–signal driver and ... Emitter–Base Breakdown Voltage. (IE = 3.0 mAdc, IC = 0). V(BR)EBO ...

http://www.tugicom.com/rf-transistor/MRF314.pdf

NPN Darlington Transistor. This device is designed for applications requiring extremely ... V(BR)CBO. Collector-Base Breakdown Voltage. IC = 100 µA, IE = 0 ...

http://eshop.engineering.uiowa.edu/NI/pdfs/01/30/DS013060.pdf

V(BR)EBO. UNITS. V. V. V. V. V. SOT-23 BIPOLAR TRANSISTORS. TRANSISTOR(NPN). Dimensions in inches and (millimeters). 0.118(3.00). 0.012(0.30). 0.020(0.50) ...

http://www.rectron.com/data_sheets/c945.pdf

PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. DC characteristics of any single transistor. V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 ...

http://www.hardtofindelectronicparts.com/datasheets/BFC505_2.pdf

General Purpose Transistor. NPN Silicon. MAXIMUM RATINGS ... Emitter–Base Breakdown Voltage. (IE = 10 μAdc, IC = 0). V(BR)EBO ...

http://www.smd.ru/files/upload/1253/ru/mmbt3904lt1.pdf

This IGBT power transistor features the high switching speeds of a power MOSFET ... V(BR)CES Collector Emitter. 1000. V. VCE = 0. Breakdown Voltage ...

http://www.irf.com/product-info/datasheets/hirel/om6516sc.pdf

RF Power Transistor. Designed primarily for application as a high–power linear ... Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0). V(BR)CEO ...

http://www.ea1ddo.es/drake/MRF421-Macom.pdf

NPN Silicon Darlington Transistors. BC 875 … BC 879 ... 2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. ... V(BR)CE0 ...

http://www.produktinfo.conrad.com/datenblaetter/150000-174999/154873-da-01-en-TRANSISTOR_BC_879_TO92.pdf

SWITCHING TRANSISTOR. FEATURES. • SILICON PLANAR EPITAXIAL NPN. TRANSISTOR ... V(BR)CEO. Collector – Emitter Sustaining Voltage. V(BR)CBO ...

http://www.semelab.com/pdf/bipolar/2N2222A.pdf

V(BR)CBO. Collector-Base Breakdown Voltage. IC = 100 µA, IE = 0 .... ADHESIVE TAPE IS ON BOTTOM SIDE. FLAT OF TRANSISTOR IS ON TOP ...

http://www.solarbotics.net/library/datasheets/MPSA29.pdf

V(BR) V(BR| V(BR) lCB0. CBO CES EBO /iA. Volts Volts Volts Max. D-C CURRENT GAIN (hFF) ... purpose silicon transistor arrays consisting of four independent ...

http://matthieu.benoit.free.fr/cross/data_sheets/Sprague_TPQ_Series.pdf